溶胶-凝胶提拉法制备ITO透明导电膜

Sol-gel dip-coating technique for preparation of ITO thin film

采用溶胶凝胶(sol gel)法, 利用自制的提拉实验设备于石英玻璃片上制得了 ITO(indium tin oxide)透明导电薄膜, 并就薄膜的物相结构、微观组织、导电性能及透光性等进行了研究分析。结果表明: 薄膜的方电阻和透光性与提拉速度、提拉次数、热处理温度、冷却方式及 Sn 原子掺杂量等因素有关。当 Sn 原子掺杂量为12.5%(质量分数)、提拉速度为80 mm/min、经5次提拉且每次提拉后经550℃热处理(炉外空冷)而最终制得的ITO薄膜的方电阻为110Ω/□, 透光率可达90%以上。用溶胶凝胶法制备 ITO薄膜具有工艺简单可控, 成本较低且宜于大面积成膜等优点。

The ITO(Indium tin oxide) thin films were prepared by sol-gel method on the quartz glass slices to be clipped by a lab-scale dip-coating equipment. The structure properties and the physical properties (electrical resistance and transmittance) of the films were investigated by XRD, SEM, IR four-probe method and UV-VIS spectrometer. The experimental results indicate the possibility to prepare transparent and conductive ITO films by sol-gel dip-coating technique. The resistance and transmissivity of films is related to the tin atoms volume to be adulterated, dip-coating speed, heat treatment temperature, et al. The resistance of the ITO films is 110Ω/□ and the transmissivity is above 90% at the visible light area when tin atoms content in the sample is 12.5%(mass fraction), the dip-coating speed is 80mm/min and the heat treatment temperature is 550℃ in the technique condition. It will be convenient for preparation of large area ITO films by sol-gel dip-coating technology in low cost.