摘要
介绍了利用辉光放电光谱法分析掺杂纳米硅薄膜,通过优化辉光光源激发参数、计算标准样品的溅射率,建立了掺杂纳米硅薄膜的定量表面分析方法。方法应用于实际掺杂纳米硅薄膜样品的分析,并将分析深度、剖析结果与表面形貌仪的结果进行了对照。试验结果表明,分析方法快速、准确,具有实际应用价值。
Glow-discharge spectrometry was applied to the analysis of doped nanocrystalline silicon (nc-Si∶H) film. Through optimization of excitation parameters of the glow-discharge source and calculation of the sputtering rate of the certified reference materials, a method for the quantitative surface analysis of nc-Si∶H film was established. In its application to the analysis of nc-Si∶H film samples, a contrast was made between the results of depthwise analysis obtained by this method and the results of profile analysis obtained by profilometer, which showed that the method presented in this paper was proved to be accurate, rapid and practical.
出处
《理化检验（化学分册）》
CAS
CSCD
北大核心
2005年第2期80-83,86,共5页
Physical Testing and Chemical Analysis(Part B:Chemical Analysis)
关键词
辉光放电光谱法
掺杂纳米硅薄膜
溅射
Glow discharge spectrometry
Hydrogenated-doped nanocrystalline silicon film
Sputtering
