摘要
本文主要根据可控硅整流器原理,论述配合调压器的档位应在小控制角下运行,同时选择参数相近的元 件,使可控硅整流器主回路相与相之间均流,实现功率因数的提高。
Based on the principle of the thyristor rectifier, the paper expounds that keeping current equal from phase to phase for the main loop of the thyristor rectifier and enhancing the power factor can be both obtained by assorting the booster’s stage running at small control angle and choosing the similar parameter component.
出处
《冶金丛刊》
2005年第1期20-23,共4页
Metallurgical Collections
