摘要
研究了制备碳纳米管 ( CNT)场发射阴极的厚膜工艺 ,通过浆料配方和烧结工艺等方面的探索 ,在 Si基底上制作了均匀、平整、场发射特性良好的 CNT厚膜。 CNT厚膜工艺研究表明 ,CNT浆料中银浆的最佳比例约为 4.2 % ,最佳烧结温度为 480℃ (空气中 ) ,才能保证厚膜有较强的附着力 ,CNT又不至于全部氧化。银浆比例过大 ,则使高电压时场发射电流明显下降 ,通过对 CNT厚膜的场发射特性测量得知 ,其开启电压为 2 .4V/μm,在 5 V/μm的电场下 ,场发射电流密度为 2 7.8μA/cm2 ,但发光显示情况不佳 ,通过使用含有机粘结剂的浆料 。
Thick film process used to prepare carbon nanotube(CNT) cathode is studied. By investigation of CNT paste and sintering process, we can obtain uniform, flat CNT thick films with good field emission performance. The optimum sintering temperature is 480 ℃ in air, under which the thick film adheres tightly to Si substrate and CNT avoids to be oxidated .The optimum proportion of Ag in the CNT paste is about 4.2%, beyond which emission current under high voltages will decrease evidently . The measurements reveal that field emission of the CNTs cathode turns on with a field of (2.4 V/μm) and emission current density can attain to 27.8 μA/cm^2 at 5 V/μm. By using CNT paste containing organic binder the demomtration of emission image can be improved.
出处
《电子器件》
CAS
2004年第4期543-546,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金重点项目 ( No.60 0 3 60 1 0 )
西安交通大学自然科学基金项目 ( No.0 90 0 5 73 0 3 5 )资助课题
关键词
碳纳米管阴极
厚膜工艺
银浆
场发射
CNT cathode
thick film process
ag paste
field emission
