摘要
在商用 SIMOX衬底上制备了抗辐照 NMOSFETs,使用的主要技术手段有 :氮化 H2 -O2 合成栅介质加固正栅 ;增加体区掺杂 ,以提高背栅阈值电压 ;采用 C型体接触结构 ,消除边缘寄生晶体管。结果表明 ,在经受 1× 1 0 6 rad( Si)的辐照后 。
Total dose radiation hard NMOSFETs were fabricated on SIMOX substrate. The used technologies are N_2O annealed H_2-O_2 grown dielectric for the front gate hardness, high doping of the body region to increase the back gate threshold voltage, and a C-type body-tie structure to eliminate the lateral MOS transistor. The results show that the characteristic of the NMOSFETs did not change much after the radiation of 1×10~6 rad(Si).
出处
《电子器件》
CAS
2004年第4期578-580,共3页
Chinese Journal of Electron Devices
