摘要
对分辨率极高的电子束光刻技术和高选择比、高各向异性度的 ICP刻蚀技术进行了研究 ,形成一套以负性化学放大胶 SAL- 6 0 1为电子抗蚀剂的电子束光刻及 ICP刻蚀的优化工艺参数 ,并利用这些优化参数结合电子束邻近效应校正等技术制备出剖面形貌较为清晰的 30 nm精细线条图形 .
Electron-beam lithography with high resolution and ICP etching with high selectivity-ratio and high anisotropy are investigated.Using chemically amplified resist SAL-601 as the electron resist,optimal process parameters of electron-beam lithography and ICP etching are achieved.These parameters are combined with electron-beam proximity correction to form 30nm lines with clear-cut cross-sectional profiles.
基金
国家重点基础研究专项基金 (批准号 :G2 0 0 0 0 3 65 0 1)
国家自然科学基金 (批准号 :90 2 0 70 0 4)资助项目~~
关键词
微细加工
电子束光刻
邻近效应校正
ICP刻蚀
microfabrication
electron-beam lithography
proximity effect correction
ICP etching
