摘要
The buried channel (BC) nMOSFETs with gate oxide grown thermally on 4H-SiC are fabricated.The BC region and source/drain region are formed by nitrogen implantation at room temperature followed by annealing at 1600℃.The channel depth is about 0.2μm.The peak field-effect mobility of 18.1cm2/(V·s) for 5μm device is achieved.Thickly dotted pits found in the surface through microscope may be one of the important factors of the cause low field-effect mobility.The threshold voltages are 1.73V and 1.72V for the gate lengths of 3μm and 5μm respectively.The transconductance at V G=20V and V D=10V is 102μS for the gate length of 3μm.
研制了 4 H - Si C热氧化生长氧化层埋沟 n MOSFET.用室温下 N离子注入的方法形成埋沟区和源漏区 ,然后在 16 0 0℃进行激活退火 .离子注入所得到的埋沟区深度大约为 0 .2μm .从转移特性提取出来的峰值场效应迁移率约为 18.1cm2 /(V· s) .造成低场效应迁移率的主要因素可能是粗糙的器件表面 (器件表面布满密密麻麻的小坑 ) .3μm和 5μm器件的阈值电压分别为 1.73V和 1.72 V.3μm器件饱和跨导约为 10 2μS(VG=2 0 V ,VD=10 V )
