Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates

蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件(英文)

Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device.

报道了蓝宝石衬底 Al Ga N/ Ga N共栅共源器件的制备与特性 .该器件包括栅长为 0 .8μm共源器件与栅长为1μm的共栅器件 .实验表明 ,共栅器件的第二栅压会显著影响器件饱和电流与跨导特性 ,从而控制功率增益 .与共源器件相比 ,共栅共源器件表现出稍低的 f T、较低的反馈、显著增加的功率资用增益及较高的端口阻抗 .