Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector

SiGe共振腔增强型探测器的制备(英文)

A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO 2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.

利用 SOI材料的埋层二氧化硅的自停止特性 ,成功制作了具有高反射底镜的共振腔增强型 Si Ge探测器 .底镜沉积于 EPW腐蚀液腐蚀形成的背孔内 ,在 1.2～ 1.5 μm范围内 ,反射率高达 99% .探测器的共振峰在 1.344 μm,光响应为 1.2 m A/ W.与普通结构的探测器相比 ,文中所报道的探测器光响应有 8倍的增强 .