摘要
以 H2 O作氧源 ,Zn(C2 H5) 2 作 Zn源 ,N2 作载气 ,在 5 0 m m Al2 O3(0 0 0 1)衬底上采用常压 MOCVD技术生长出高质量的 Zn O单晶薄膜 .用 X射线双晶衍射、原子力显微镜和光致发光技术对样品进行了综合表征 ,报道了 Zn O单晶膜的 (10 2 )非对称衍射结果 .研究结果表明 ,在 5 0 0～ 70 0℃范围内随生长温度升高 ,Zn O薄膜的双晶摇摆曲线半峰宽增宽 ,表面粗糙度减小 ,晶粒尺寸增大 ,在衬底温度为 6 0 0℃时生长的 Zn O膜的深能级发射最弱 .
High quality ZnO single crystal films are successfully grown on the 50mm (0001) sapphire substrates by atmospheric MOCVD,using H 2O and Zn(C 2H 5) 2 as O and Zn sources,respectively,and N 2 as carrier gas.The properties of the samples(unannealed) are examined by double crystal X-ray diffraction(DCXRD),atomic force microscopy(AFM),and room temperature PL spectra.The results of ZnO (102) plane ω-rocking curve and ω-2θ scan are reported too.The influence of growth temperature from 500℃ to 700℃ on the properties of ZnO thin films is studied.The results show that with the increase of growth temperature the full width at half maximum(FWHM) of DCXRD becomes wider,but the surface becomes smoother,and the grain size becomes larger.The smallest DCXRD FWHM of ZnO(002) plane of the samples is 265″(ω-2θ scan) and 351″(ω-rocking curve),while the smallest FWHM of ZnO(102) plane is 568″(ω-2θ scan) and 656″(ω-rocking curve).The smallest RMS roughness of the samples is 2.451nm(10μm×10μm area),and the largest mean diameter of grain size of the samples is 1.6μm.The peak intensity of ultraviolet emission of PL spectra is very strong,while that of the deep level emission(green-yellow band) of the sample grown at 600℃ is the weakest.
基金
国家高技术研究发展计划专项经费资助项目 (编号 :2 0 0 3 AA3 0 2 160 )~~
