摘要
使用 Si C作为过渡层 ,采用自行设计建造的连通式双反应室高温 MOCVD系统很好地克服了 Zn O和 Si C生长时的交叉污染问题 ,在 Si基片上外延出高质量的 Zn O薄膜 .测量了样品的 XRD和摇摆曲线 ,以及室温下的 PL谱 .实验结果表明 ,Si C过渡层的引入大大提高了 Zn O薄膜的质量和发光性能 ,并有望实现在 Si上制备 Zn O单晶薄膜 .
High qualitical ZnO thin films are deposited on Si(111) substrates by double connected low pressure metal-organic chemical vapor deposition(LP-MOCVD) ,with SiC buffer layer used.The effect of SiC buffer layer on the structure and luminescence properties has been investigated with X-ray diffraction (XRD) and photoluminescence (PL) spectra at room temperature.The full-width at half maximum (FWHM) of rocking curve of ZnO (002) reflection is reduced with SiC buffer layer used.The intensity of luminescence of ZnO films is also increased.In addition, with the SiC buffer layer,green luminescence is appeared which is considered to be from the electron transition from conduction band bottom to the O Zn level formed in the band gap.
基金
国家自然科学基金重大研究计划 (批准号 :90 2 0 10 3 8)
中国科学院知识创新工程 (批准号 :KJCX2 -SW-0 4-0 2 )资助项目~~
