4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制

Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC

报道了在 4 H- Si C衬底上 Al Ga N/ Ga N高电子迁移率晶体管 (HEMT)的研制和室温特性测试结果 .器件采用栅长为 0 .7μm,夹断电压为 - 3.2 V,获得了最高跨导为 2 0 2 m S/ m m,最大漏源饱和电流密度为 915 m A/ m m的优良性能和结果 .

The fabrication of AlGaN/GaN high electric mobility transistor grown on 4H-SiC substrate and its performance at room temperature are reported.Ohmic contacts and Schottky metal system are Ti/Al and Ni/Ar,respectively.The pinchoff voltage of the device is -3.2V with 0.7μm gate length.The device exhibits an maximum transconductance of 202mS/mm and a saturated current density as high as 915mA/mm.