摘要
报道了一套先进的0.5μm高速双层多晶硅自对准BiCMOS制作工艺。工艺中采用了先进的深槽隔离技术、选择性集电极注入(SIC)技术、使用自对准Si3N4/SiO2复合侧墙作为E-B结的隔离、用低能氟化硼取代硼注入基区形成超薄内基区。通过优化BiCMOS制作工艺,最终制作出了性能优良的高速BiCMOS器件。
An advanced high speed BiCMOS fabrication technology is presented. Some advanced technology is adopted including deep trench isolation, SIC, self-aligned Si3N4/SiO2 composite sidewall as Emitter-Base junction isolation and ultra-thin interior base formed by BF2 implantation. Finally a good device electrical performance is achieved by optimizing BiCMOS fabrication process.
出处
《微电子学与计算机》
CSCD
北大核心
2005年第1期133-135,共3页
Microelectronics & Computer
基金
国家"863"计划项目资助(2002AA1Z1560)
