VDMOSFET二次击穿效应的研究

Study of Secondary Breakdown Effect about VDMOSFET

在 PDP驱动电路中高压功率器件大量采用了 V DMOS器件 ,由二次击穿引起的器件损坏不容忽视。本文讨论了双极晶体管和功率晶体管 VDMOS二次击穿的现象 ,并着重分析了功率晶体管 VDMOS二次击穿的原因 ,提出了改善其二次击穿现象的措施。用器件仿真软件 MEDICI模拟了各参数因素对功率晶体管 VDMOS二次击穿的影响。

VDMOS is widely adopted in PDP driver, the damage resulted by secondary breakdown effect can′t be ingnored The secondary breakdown effect of bipolar transistor and VDMOSFET are discussed This paper emphases on VDMOS and analyses the measures amending secondary breakdown The effect of some parameters on secondary breakdown is simulated by using the MEDICI soft