摘要
本文采用微波等离子体化学气相沉积 (MPCVD)系统 ,在单晶Si衬底上制备出了SiCN薄膜。所采用的源气体为高纯CH4和N2 ,而Si源来自于Si衬底、SiH4和Si棒。用场发射扫描电镜 (SEM)、X射线光电子能谱 (XPS)和X射线衍射谱 (XRD)对样品进行了表征与分析。结果表明 ,外加Si源、高的衬底温度、高流量N2 有助于提高样品的成膜质量。
Silicon carbon nitride (SiCN) film was synthesized on Si wafer by microwave plasma chemical vapor deposition (MPCVD) with CH4, N2 and different Si sources. The samples were characterized by field emission scanning electron microscopy (SEM), X-ray photo-emission spectroscopy (XPS) and X-ray diffraction spectroscopy. It is shown that additional Si source, high substrate temperature and high flow rate of N2 contribute to obtain a SiCN film with high quality. The film exhibits a new hexagonal SiCN phase and multibonding structure.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第6期913-917,共5页
Journal of Synthetic Crystals