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SiCN薄膜在Si衬底上的沉积 被引量：1

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates
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摘要 本文采用微波等离子体化学气相沉积 (MPCVD)系统 ,在单晶Si衬底上制备出了SiCN薄膜。所采用的源气体为高纯CH4和N2 ,而Si源来自于Si衬底、SiH4和Si棒。用场发射扫描电镜 (SEM)、X射线光电子能谱 (XPS)和X射线衍射谱 (XRD)对样品进行了表征与分析。结果表明 ,外加Si源、高的衬底温度、高流量N2 有助于提高样品的成膜质量。 Silicon carbon nitride (SiCN) film was synthesized on Si wafer by microwave plasma chemical vapor deposition (MPCVD) with CH4, N2 and different Si sources. The samples were characterized by field emission scanning electron microscopy (SEM), X-ray photo-emission spectroscopy (XPS) and X-ray diffraction spectroscopy. It is shown that additional Si source, high substrate temperature and high flow rate of N2 contribute to obtain a SiCN film with high quality. The film exhibits a new hexagonal SiCN phase and multibonding structure.
作者 程文娟 张阳 江锦春 朱鹤孙
机构地区 清华大学化学系
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2004年第6期913-917,共5页 Journal of Synthetic Crystals
关键词 SI衬底 衬底温度 薄膜 X射线衍射谱 X射线光电子能谱(XPS) 三元化合物 MPCVD 场发射扫描电镜 微波等离子体化学气相沉积 CN SiCN film MPCVD SEM XPS XRD
分类号 O484 [理学—固体物理] TN304 [电子电信—物理电子学]
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参考文献11

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共引文献13

同被引文献13

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引证文献1

人工晶体学报
2004年 第6期

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