3C-SiC的液相外延生长及其结构的保持与分析

Liquid Phase Epitaxial Growth of 3C-SiC and Studies on Steadiness andCharacterization of Its Structure

3C SiC因其优越的物理和电学性能是制造耐高温、大功率、高频率器件的理想材料。本文报道了采用液相外延法从硅熔体中生长 3C SiC及抑制其相变的研究进展。采用X射线衍射、透射电镜、Raman散射等检测手段对样品进行结构分析 ,结果表明所制备的样品为 3C

C-SiC is an ideal material for manufacturing high power and high frequency devices applied in high temperature electronics owing to its superior physical and electronic properies. This article reports the developments of 3C-SiC growth and steadiness of its structure from Si melt by liquid phase expitaxy. The typical sample is characterized by X-ray diffraction, transmission electron microscope and Raman scattering spectroscopy. The results reveal that the sample is well crystallized.