808nm大功率半导体激光器腔面膜的制备

Fabrication of 808 nm SQW Semiconductor Laser Facet AR HR Coating

采用等离子体辅助电子束蒸发方法在 80 8nm大功率量子阱半导体激光器腔面设计镀制了HfO2 /SiO2 系前后腔面膜 用直接测量法测量并比较了各种常用膜系的相对损伤阈值 增透膜的反射率为 12 .2 % ,高反膜的反射率为 97.9% 对于 10 0 μm条宽、10 0 0 μm腔长的条形结构通过器件测量结果是出光功率提高 79%、外微分量子效率提高 80 %、功率效率由没镀膜之前的 2 2 .2 %提高到镀膜之后的 39.8%

HfO2/SiO2 front and back facet coatings of 808 nm SQW semiconductor laser has been fabricated with Plasma Assisted Electron Beam Deposition (Plasma-Ion Assisted Deposition) method. Front AR coating reflectivity is as low as 12.2% and back HR coating is as high as 97.9%. The output power is improved 79%, external different quantum efficiency improved 80%. The output efficiency increased from 22.2% to 39.8% for 100 μm wide 1000 μm-cavity length device.