磁控反应溅射SiN_x薄膜的研究

Silicon Nitride Thin Films Deposited by R.F. Magnetron Sputtering

用磁控反应溅射 (RF)的方法制备了SiNx 薄膜 分析了以硅为靶材 ,用N2 /Ar做溅射气体条件下不同的气流比率、总气压以及沉积速率对薄膜光学常数和表面结构形态的影响 ,得出较低总气压下气流比率对薄膜光学常数的影响是最关键的 ,而总气压较大的时候 ,水汽影响增大 ,气流比率的影响反而不明显 最后提出了合适的工艺条件来制备符合要求的SiNx

Silicon nitride thin films were deposited on K9 glass by r. f. magnetron sputtering without heating. Comparisons of the optical properties were made as the films' deposition conditions changed. Several different deposition routines showed that gas ratio played much more important role than total gas pressure when total pressure is low. The turning point of Si-rich film and N-rich film lies at the flow rate N2-to-Ar of 3:14 . Keeping total pressure low is necessary for the sake of deposition rate and refractive index. SiNx thin films were studied by AFM and UV-VIS scanning spectrophotometer.