Si—nipi超晶格亚带结构的研究

Investigation of Subband Structurc for Si-nipi Superlattice

本文采用各项异性有效质量近似,加入局域密度泛函近似下的交换关联项,自治地计算了Si—nipi在室温时亚带结构随自由载流子浓度的变化规律.结果表明,超晶格的有效带隙随自由载流子浓度的增加而变宽.这个结论与绝对零度时是一致的.

This paper calculats the tubband structure which vary with free Carrier concentration for Si-nipi superlattice by self-Conistence, using antisotropic effective mass,in the framework of local-density functional approxima t ion, The effective band gap changes wider as the free Carrier conccntration incrases. Comparing with the subband structure at T=0K, the Conclusioii is consistent.