离子络合法制备ZnO纳米线

Preparation of ZnO nanowires by ionic complexation

通过高聚物PAM与锌盐发生离子络合反应 ,将络合溶液涂膜在单晶硅片上 ,再通过烧结使之生长出ZnO纳米线。用场发射扫描电子显微镜 (FE SEM )、X射线衍射 (XRD)、红外光谱 (IR)对所得样品的结构与形貌进行分析表征 ,结果表明ZnO纳米线直径约 6 0～ 80nm、长度约 1～ 2 μm ,单晶 ,为六方晶系 ,且沿c轴方向优先生长。

The ZnO nanowires have been pr epared on Si substrate. The growth procedure of ZnO nanowires consists of two st eps:(1) ionic complex reaction happened between polyacry lamide (PAM) and zinc salt, after the reaction,(2) we put the solution on Si substrate uniformly an d then annealing. Scanning electron microscope(SEM), X-ray diffraction(XRD), in fra-red spectrum(IR) have been employed to detect the ZnO nanowires. They indic ate that the diameter and the length of ZnO nanowires are about 60～80 nm and 1 ～2 μm. ZnO nanowires are hexagonal single-crystalline and grown along the c-axi s orientation preferentially.