高压晶闸管的双正斜角造型及表面保护

Double Positive Beveling Formation and Surface Protection of High-voltage Thyristor

结合KP9500-55系列晶闸管的研究课题,对晶闸管的正负斜角、双正斜角等表面造型进行理论分析,通过工厂的生产实践探讨应用不同表面造型的可行性。由刻槽法获得的双正斜角表面造型形成管芯电压合格率稳定在60%-80%之间的生产能力。结果表明,采用刻槽方式的双正斜角造型,槽深在片厚的0.60倍-0.66倍范围,两次喷腐,表面采用硅橡胶保护,可以制成正/反向阻断特性接近,电压达到5500V的高压晶闸管,在高压器件的研制中值得推广和应用。

Combining with the research subject KP9500-55 series thyristor, positive-negative beveling formation and double positive beveling formation are theoretically analyzed. The application feasibility of different formations is discussed as well. A kind of double positive beveling formation comes from groove-engraving. The capacity of mass production is formed in our factory appling this surface formation, and the dies voltage gield is measured up to 60% ~ 80 %. As a result, a die with double positive beveling formation, with groove depth as 60% ~ 66% of die thickness, by two times surface etching, and silicon e-lastomer protection, can be made into a 5 500 V high-voltage thyristor which has a similar forward /reverse blocking characteristics. This surface formation is applicable to the high-voltage semiconductor device.