超分辨近场结构光刻技术

Photolithography Using Super-Resolution Near Field Structure

介绍了一种新的近场光刻技术的基本原理及其在光刻方面的应用研究的最新进展。新技术的基本原理是:光远场照射,通过超分辨掩模产生光刻所需的超过衍射极限的近场光,利用夹在掩模和光刻胶中间的电介质保护层实现了近场光的最佳耦合,减小了线宽并大大提高了光刻速度。这种膜层结构叫超分辨近场结构(Super-RENS),是近年来发展起来的一种新的近场光学技术。

This paper introduces a new near-field photolithography technology. Its principle is: laser irradiates from far-field and produces near-field light of super-resolution through the mask layer. Making use of the dielectric layer between the mask layer and the photoresist, the best coupling of near-field light is realized which can minimize the linewidth and improve the photolithography speed greatly. This structure is called Super-RENS (Super-resolution near field structure). It is a newly developed near-field optical technology . Recent progress of its applications in photolithography are introduced.