准全方位InSb-In磁阻式振动传感器

Relatively Omnidirectional Vibration Sensor Made of InSb-In magnetoresistance

本文最新研制了一种用锑化铟-铟(InSb-In)共晶体薄膜磁阻制成的准全方位振动传感器。其半导体磁头由位于上下方的两对方向垂直的 InSb-In 磁敏元件构成,将检测方位范围由一维空间扩展到现在的二维空间。经实测,磁头上方的磁敏元件灵敏度大于下方元件,输出信号相位差在 00～1800 之间,信噪比在 30dB～32dB 范围内。当温度-400C～800C 之间变化时,信号处理电路输出稳定可靠。

A relatively omnidirectional vibration sensor made of InSb-In eutectic film magnetoresistance is introduced. The semiconductor magnetic head is composed of two pairs of upright magnetoresistances , which make the orientational survey of the sensor expands from one dimension to two dimensions。It has been observed that sensitivity of the upward magneto resistance is better than the inferior one and the different phase of two output signals ranges from 0℃ to180 ℃。 The Signal Noise Ratio is within the range of 30 and 32 dB。The output of signal processing circuit is steady when temperature ranges from –40℃ to +80℃。