摘要
用900℃15秒快速热退火使硅上钛膜在高纯NH_3中同时形成TiN_xO_y/TiSi_2双层结构.研究了TiN_xO_y作为Al的扩散势垒的有效性.结果表明,Al/TiN_xO_y/TiSi_2/Si接触系统直至550℃在N_2中烧结30分钟仍然具有良好的热稳定性.
A TiNxOy/TiSi2 bilayer structure is formed simultaneously for Ti film on Si by rapid thermal annealing at 900℃ for 15s in highly pure NH3. The effectiveness of TiNxOy as a diffusion barrier layer for Al has been studied. Eesults show that the Al/TiNxOy/TiSi2/Si contact system has good thermal stability, when Bintered in N2, up to 550℃ for 30min.
出处
《应用科学学报》
CAS
CSCD
1993年第3期253-257,共5页
Journal of Applied Sciences
基金
高纯硅及硅烷国家实验室基金资助项目
关键词
钛硅化物
扩散势垒
热稳定性
titanium silicide, diffusion barrier, rapid thermal annealing
