摘要
采用Xe^+(300 keV)和Ar^+(90—120 keV)离子束,在室温下轰击双层型及多层膜样品,离子注量范围为1×10^(15)-1×10^(17)cm^(-2)。用俄歇电子能谱,X射线光电子能谱及卢瑟福背散射法分析成分的深度分布,并用透射电镜观察多层膜的结构。结果表明,体系中主要发生级联混合。对多层膜有Q∝φ1/2。而双层样品,则为Dt∝φ1/2。用Xe^+混合时,多层膜中部的混合显著多于两侧,与TRIM计算的能量沉积密度分布相符。多层膜混合后形成体心立方的β-Ti-Mo亚稳固溶体。碳、氧杂质对混合有显著的抑制作用,并在混合过程中重新分布。
Both bilayer and multilayer samples are bombarded at room temperature with Xe^+ (300 keV)or Ar^+ (90--120 keV) for the doses of 1×10^(15)--1×10^(17)cm^(-2). AES, XPS and RBS are used forthe depth profiling of compositions. TEM observations are also carried out on multilayer samples.It is found that ion beam mixing occurres in cascade regime Q∝Φ^(1/2) for the multilayers and effec-tive Dt∝Φ^(1/2) for the bilayers, respectively. Nonuniform mixing is observed in multilayers, partic-ularly with Xe^+ bombardment, which is consistent with the calculations of the deposited energydensity distribution. Metastable β-Ti-Mo solid solution of bcc structure is formed after mixing.Impurities such as C, O significantly suppress the mixing and are also redistributed buring ionbombardment.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1993年第6期481-487,共7页
Atomic Energy Science and Technology
关键词
离子注入
离子束混合
薄膜
钛钼
Ti/Mo system
Ion implantation
Ion beam mixing
Thin film