摘要
利用非互易律光致抗蚀剂在低照度下曝光,其光化学反应速度急剧下降效应,不仅可以提高光刻工艺的分辨率,而且可通过选定必要的曝光条件,方便地制造出开口小于荫罩孔径的负型黑底管。
If reciprocity-law-palling photoresist is exposed under low illumination,it wo- uld produce an effect that its photochemical reaction speed would steep descent.The effect not only can tmprovc resolution in photoetching technology but also can conveniently make negative BM tubes that it's open slots are smaller than mask holes under necessary exposeing condition.
出处
《真空电子技术》
北大核心
1993年第4期33-39,共7页
Vacuum Electronics
关键词
彩色显像管
黑底
投影曝光
非互易律
CPT
black matrix
projecting exposure
reciprocity-law-failing