摘要
使用超高真空扫描隧道显微镜(STM)观察了Si(100)面,得到了清洁Si(100)面的STM像。从Chadi模型的形成和表面原子的各向异性扩散分析了STM像的两种类型的台阶棱。Si(100)面的STM像存在许多缺陷,缺陷位置能从在同一区域样品上加正负偏压的STM像来确定。
Si(100) surface was observed with UHV-STM. STM images of clean Si (100) surface were obtained. Two types of step edges in the STM images were analyzed through the formation of the Chadi mode and the anisotropic diffusion of surface atoms. The STM image of Si (100) surface showed the existence of many defects. The position of the defects could be determined from the STM image with positive or negative sample bias in the same area.
出处
《真空科学与技术》
CSCD
1993年第1期49-55,共7页
Vacuum Science and Technology
