摘要
本文介绍用直流平面磁控溅射方法制备In_2O_3导电薄膜,以该导电薄膜为缓冲层,在硅衬底上沉积YBCO高温超导薄膜。用大直径平面磁控溅射,原位退火方法制备YBCO超导薄膜,用In_2O_3缓冲层来减少YBCO薄膜和Si衬底之间的相互扩散。所制得的YBCO高温超导薄膜的零电阻温度为81K,转变温度为98K,用X光衍射(XRD)方法来分析其微结构,结果表明其微观结构是C轴择优取向。用俄歇微探针(AES)来研究YBCO和In_2O_3、In_2O_3和Si之间的相互扩散情况,结果表明In_2O_3导电缓冲层基本上阻挡住YBCO和Si之间的相互扩散。
The superconducting YBa_2Cu_3O_(7-x) (YBCO) thin films have been grown in situ on Si with a conductive Indium-oxide(In_2O_3) buffer layer, which was sputtered by reactive dc magnetron method, the YBCO thin films were sputtered by large diameter dc magnetron method. In_2O_3 buffer layer was used to minimize the interdiffusion between Si and YBCO. The as-deposited YBCO thin film has a Tc on-set at 98K with zero resistance at 81K. X-ray diffraction data indicate that the films have a preferential C-axis oriented structure. Depth profiling by Auger electron spectroscopy has been employed to study the diffusion of the interfaces beween YBCO and In_2O_3、In_2O_3 and Si. The result indicates that conductive In_2O_3 buffer layer minimizes the interdiffusion between YBCO and Si.
出处
《真空科学与技术》
CSCD
1993年第2期87-92,共6页
Vacuum Science and Technology
