n-GaAs(100)表面及Na/n-GaAs(100)界面的光电子谱研究

STUDY OF THE n-GaAs(100) SURFACE AND Na/n-GaAs(100) INTERFACE BY PHOTOEMISSION

采用X射线光电子谱(XPS)及紫外光电子谱(UPS),对经5keV Ar^+离子轰击后的n-GaAs(100)表面及其Na/GaAs(100)界面作了详细的研究。并且和Na/n-GaAs(100)-(4×1)界面进行比较,以揭示Ar^+离子轰击对金属/n-GaAs(100)界面的影响。结果表明,经5keV氩离子轰击后的n-GaAs(100)表面,其功函数较n-GaAs(100)-(4×1)表面大0.3eV。而且,Na在低覆盖度时(θ≤0.02ML)。轰击后的GaAs(100)表面,Na/n-GaAs(100)界面费米能级移动量为0.7eV,而Na/n-GaAs(100)-(4×1)界面,其费米能级移动量仅为0.3eV。

The n-GaAs(100) surface which was bomdarded by 5keV Argon ion and Na/n- GaAs (100) interface were studied by XPS and UPS,and was compared with the interface of Na/n -GaAs (100)-(4×1). The results show that work function of the n - GaAs (100) surface is larger than the n - GaAs (100)-(4×1) surface's. The band -bend of the Na/n -GaAs(100) interface is variable with different n -GaAs (100) surface structures.