摘要
在320℃时,如氧化铟锡(ITO)薄膜暴露在乙醇气氛中则其电阻急剧下降。利用直流平面磁控反应溅射的方法在约1Pa的氧与氩的混合气体中溅射铟锡合金制备了ITO薄膜。如果在ITO薄膜表面沉积一层不连续的Rt膜,薄膜对乙醇蒸汽的检测灵敏度大大提高,而且工作温度下降。本文就制备工艺对薄膜检测灵敏度的影响做了一些探讨,并且对Rt膜的作用进行了讨论。
The electrical resistance of the indium tin oxide (ITO) thin films decreases enormously at about 320℃ when it is exposed to ethanol vapour. The ITO thin films were prepared by D.C. magnetron reactive sputtering from a metallic alloy target (In/Sn) in the pressure of about 1 Pa of O_2 and Ar mixture. By depositing a thin discontinuous platinum film on the top, the sensitivity of the ITO thin films increased and it could work at lower temperature as well. The effect of the discontinuous platinum film and the influence of the fabricating process on the film characteristics are discussed.
出处
《真空科学与技术》
CSCD
1993年第5期330-334,共5页
Vacuum Science and Technology
关键词
气敏器件
薄膜
ITO
铂膜
溅射
ITO thin film, Gas sensor, Reactive magnetron sputtering
