InSb(100)近表面区域自由载流子的累积现象:低能离子损伤的HREELS研究

AN ACCUMULATION PHENOMENON OF FREE CARRIERS IN THE NEAR-SURFACE REGION OF InSb(100)-A STUDY OF LOW ENERGY ION DAMAGE BY HREELS

半导体中等离子激发的能量与其载流子浓度有一定的关系。利用高分辨率电子能量损失谱仪(HREELS)检测到的等离子激发能量的变化则可以反应出某些半导体表面区域载流子浓度的变化。对于InSb(100)的研究表明:(1)低能离子溅射(≤500eV)以及随后的退火处理都在n型和p型InSb(100)近表面区域形成一个自由载流子累积层;(2)低能离子的这种损伤效应延伸到100nm以下的深度。

The free carrier concentration is related to plasma energy in semiconductors, therefore, the variation in plasma energy as deteted by HREELS reflects changes in the free carrier concentration. Studies of InSb (100) surfaces have shown that (a) low energy ion(≤500eV) sputtering and the follow - up annealing result in a free - carrier accumulated layer, (b) such a damage effect extends to a depth of more than 100nm.