摘要
采用多级尝试法对用来在半导体激光器端面镀制极低反射率膜的主动监控法进行优化,使剩余反射率为10^(-4)数量级膜的镀成几率大大提高,单面镀的最好水平已达到10^(-5)数量级,并且获得了两端面剩余反射率几何平均值小于3×10^(-4)的半导体发光管。根据O'Mahony对行波式半导体光放大器提出的判据,这种二极管可以用作单程增益为27.5dB的行波光放大器的工作介质。
Multi-step trials have been employed to optimize the active monitoring method. As a result, diodes with reflectivity of the order of 10^(-5) for one facet and semiconductor laser amplifiers with an averaged reflectivity of 3 × 10^(-4) for both facets have been obtained. According to the criterion proposed by O'Mahony, these diodes may be used as the gain media for travelling-wave semiconductor laser amplifiers with a single pass gain of 27.5 dB.
出处
《真空科学与技术》
EI
CAS
CSCD
1993年第5期349-351,共3页
Vacuum Science and Technology
关键词
主动监控法
镀膜
半导体激光器
Multi-step trails method, Active monitoring method, Semiconductor laser amplifier, Antireflection coating