摘要
用离子束辅助沉积合成了TiN薄膜,背散射、X射线衍射和透射电镜实验的结果表明,在本实验条件下,薄膜Ti/N比接近于TiN的化学计量比,和氮离子束流密度无关。薄膜存在<100>择优取向,在一定条件下,可以形成只有(100)取向的TiN薄膜。
TiN films were prepared by ion beam assisted deposition. The films were analysed by RBS, XRD and TEM, and their results showed that ion bombartment had a scattering effect on oxygen in the films and nitrogen that did not combine with Ti into TiN. It was found by XRD analysis that the energy of ion had an effect on the crystallization of the films, the higher the energy of ion, the better the crystallization. TiN with only <100> orientation can be deposited in certain conditions.
出处
《真空科学与技术》
CSCD
1993年第6期421-424,共4页
Vacuum Science and Technology
关键词
氮化钛
薄膜
离子束
沉积
TiN film, Ion beam assisted deposition