摘要
用Al2 O3钝化的方法对多孔硅进行了后处理 ,获得了光致发光强度强、发光稳定的样品。通过对样品进行傅里叶变换红外吸收谱的测试和分析 ,指出了Al2
Bright and stable porous silicon have been obtained by using passivation of Al 2O 3. FTIR measuremrnts have been carried out which show that the stabilization of the photoluminescence from the porous silicon is due to the formation of Al 2O 3 structure.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第4期285-288,共4页
Semiconductor Optoelectronics
基金
:国家自然科学基金资助项目 (195 2 5 410 )
关键词
多孔硅
A12O3膜
钝化
porous silicon
Al 2O 3 film
passivation
