用HREELS和UPS研究多孔硅的电子结构

Research on Electronic Structure of Porous Silicon by HREELS and UPS

使用高分辨电子能量损失谱 (HREELS)和紫外光电子能谱 (UPS)研究了新腐蚀的多孔硅 (PS)样品的电子结构。实验结果表明 ,从HREELS谱中能量损失阈值测得的PS的能隙移到 2 .9eV ,与文献报道的光激发谱 (PLE)结果相近。UPS结果表明PS的费米能级到价带顶的距离不同于单晶Si。

High resolution electron energy loss spectroscopy(HREELS)and ultraviolet photoelectron spectroscopy(UPS)are utilized to study the electronic structure for freshly etched porous silicon.The results show that the energy loss threshold which corresponds to the energy gap of porous silicon of 2.9 eV is similar to that of reported PLE results.UPS results show that the distance between Fermi level and the peak valence band in porous silicon is different from that in crystalline silicon.By combining the results of HREELS and UPS,the band arrangement at the porous silicon/crystalline silicon interface can be deduced.