载流子表观扩散长度与偏置光强关系的计算机模拟——a-Si∶H表面光生电压(SPV)实验的若干分析

The Computer Simulation for Intensity Dependence of Apparent Diffusion Length——Analysis of Surface Photovoltage (SPV) Experiments in a-Si: H

在均匀连续分布的隙态密度假设下,用指数势垒模型来描述a-Si:H的表面势垒,在此基础上理论计算拟合了实验上观测到的载流子表观扩散长度与偏置光强度的依赖关系,改善了Moore的有关SPV实验的解释。

The model of exponential potential barrier is adopted to describe the surface barrier in a-Si: H. On the assumption that the density of states is uniform throughout the gap. In this respect, the theoretically calculated curves of intensity dependence of the apparent diffusion length in surface photovoltage (SPV) experiments are in accordance with experimental results. Moore's interpretation of the above experiment is thus improved.