摘要
采用简化的PIRAC工艺对SiCp进行涂覆处理 ,并研究了该涂层对SiCp/Fe界面化学稳定性的影响。实验结果表明 ,该工艺可以在SiCp表面形成一层均匀、致密的涂层 ,它主要由Cr3Si、Cr7C3 和Cr2 3C6构成。3SiCp/Fe界面反应强烈 ,绝大多数的SiC被消耗掉 ,原位形成主要由Fe3Si构成的界面反应区 ,并在金属基体晶界形成片状珠光体团。而 3P -SiCp/Fe的界面反应很小 ,SiCp表面涂层保存完好 ,SiCp基本上未遭到破坏 ,并与基体紧密结合。涂层通过隔离Fe与SiC的接触 ,抑制P -SiCp/Fe界面反应 ,有助于提高其界面化学稳定性 。
The simplified PIRAC technology was employed to coat the SiC particulates. The formation of the coating and the effect of the coating on the chemical compatibility of SiCp/Fe interface were discussed. The results show that the coating is uniform and dense, which is mainly composed of Cr 3Si, Cr 7C 3 and Cr 23 C 6, when annealed at 1100℃ for 1h under a stationary vacuum atmosphere. After sintering at 1150℃ for 1h under hydrogen atmosphere, the violent interfacial reaction in 3SiCp/Fe results in most of SiC to disappear. The reaction zone mainly composed of Fe 3Si is formed in situ, meanwhile the fine pearlite flakes are formed at the grain boundary of the metal matrix. However, the reactivity of 3P-SiCp/Fe is very low, the coating is perfectly maintained, which prevents the SiC particulates from being damaged, and the P-SiC particulates are in tight contact with the matrix. The coating can inhibit the interfacial reaction and improve the chemical compatibility and interfacial structure of P-SiCp/Fe, acts as a barrier to isolate Fe and SiC.
出处
《兵器材料科学与工程》
CAS
CSCD
2001年第6期30-32,47,共4页
Ordnance Material Science and Engineering
基金
国家科技攻关项目 ( 99-D0 5 0 1)
教育部专项基金
