摘要
用傅里叶红外光谱、透射电镜和化学腐蚀研究了氮气氛直拉硅(NCZSi)中的氧沉淀。结果指出,原生NCZSi中存在氧对-硅-氧复合物;N集中于氧沉淀的中心区域;N参子的中心区域表现出热稳定性。文中还提出了关于NCZSi中氧沉淀形核和生长途径的假设。
The oxygen precipitation in NCZSi has been investigated in this paper by means of
FTIR,TEMand WE etc.The experimental results indicate that there are Np-Si-O complexes
in as-grown NCZSi and that the N atoms gather around the centers of oxygen precipitates.
These N-participates centers show thermal stability.Hypotheses concerning the nucleation
and growth of oxygen precipitates in NCZSi are also suggested in this paper.
基金
浙江大学高纯硅及硅烷国家重点实验室资助
关键词
直拉硅
氧沉淀
缺陷
CZSi
oxygen precipitation
defect
