期刊文献+

CZSi中氧的行为

Behavior of Oxygen in CZSi
下载PDF
导出
摘要 讨论了CZSi中氧的四类行为:(1)由石英坩埚中直拉法生长晶体时氧的行为;(2)间隙氧的本征行为,例如扩散等;(3)亚稳结构,有O-V_(si),热施主与新施主,(4)热力学稳定结构,有各种氧沉淀及其诱生缺陷。 Four categories of oxygen behavior in CZSi has been discussed. They are: (1) behavior of oxygen during the crystal growth of czochralski crystal pulled from silica crucibles; (2) intrinsic behavior of dissolved oxygen within the equilibrium Si: O solid solution, such as diffusivity; (3) metastable oxygen-containing structures involving the supersaturated Si: O solutions, such as thermal donor and new donor; (4) thermodynamically stable oxide precipitates and related defect production.
作者 佘思明
机构地区 中南工业大学
出处 《上海金属(有色分册)》 1989年第2期31-35,共5页
关键词 CZSI 热力学 行为 石英 Semiconducting materials, Behavior of oxygen, Silicon single crystal, Thermal donor, New donor
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部