摘要
讨论了CZSi中氧的四类行为:(1)由石英坩埚中直拉法生长晶体时氧的行为;(2)间隙氧的本征行为,例如扩散等;(3)亚稳结构,有O-V_(si),热施主与新施主,(4)热力学稳定结构,有各种氧沉淀及其诱生缺陷。
Four categories of oxygen behavior in CZSi has been discussed. They are: (1) behavior of oxygen during the crystal growth of czochralski crystal pulled from silica crucibles; (2) intrinsic behavior of dissolved oxygen within the equilibrium Si: O solid solution, such as diffusivity; (3) metastable oxygen-containing structures involving the supersaturated Si: O solutions, such as thermal donor and new donor; (4) thermodynamically stable oxide precipitates and related defect production.
关键词
CZSI
氧
热力学
行为
石英
Semiconducting materials, Behavior of oxygen, Silicon single crystal, Thermal donor, New donor