摘要
本文介绍一种在n型Si衬底上制备浅p^+-n结的方法。在Si衬底上通过固相反应形成一定厚度的TiSi_2薄膜后,穿过TiSi_2层进行离子注入掺杂,经快速热退火可形成浅P^+-n结。TiSi_2薄膜既作为离子注入时的阻挡层,减小离子注入深度,又作为器件的电极及互联引线。这是一种自对准工艺。
A method of formation of shallow p^+-n junction on n-type Si substrate is presented.
Through TiSi_2 layers formed by solid-state reaction on Si substrates, boron was implanted,
followed by rapid thermal annealing. The TiSi_2 layers are used as B implantation screen to reduce
the junction depth, as well as the device electrode and interconection material. This is a
kind of self-aligned technology.
