摘要
采用电化学和化学溶蚀法在体单晶硅上制备了高孔度多孔硅;室温下测量了蓝光激发的光致可见光谱,发现样品在大气环境中保存时光致发光谱随时间有显著“蓝移”,并渐趋稳定,谱峰位置“蓝移”约40nm;文中给出了发光膜的平面透射电镜形貌和电子衍射照片。“蓝移”和电镜照片的结果能用量子尺寸效应说明。文中还给出了喇曼谱仪上测得的光致发光谱和多孔硅的喇曼位移峰。
Electrochemical and chemical disolution was used to prepare high porosity porous siliconsamples at room temperature under excitation of blue light or Ar laser beam emitted visiblelight. Luminescence spectra were recorded after different period of exposure to ambient atmosphereto show blue-shift and eventual steady state of the spectrum. The total blue-shift ofspectrum maximum was about 40nm. Transmission electron micrograph and electron diffractionpattern of light emitting film were presented. Both electron micrograph and blue shift canreadily be explained by quantum size effect. Raman spectroscopy measurements showed apartfrom above photoluminescence a characteristic peak of porous silicon.
