摘要
本文利用反射式高能电子衍射,对于Mn在GaAs(001)清洁表面上的分子束外延进行了研究,第一次从实验上直接观察到Mn的一种新的亚稳态,即γ-Mn(面心立方结构)。实验还发现,在靠近GaAs界面处的外延层中,晶格常数在平面内约有5％的膨胀,这一晶格畸变随着与界面距离的增大而逐步减少。
Molecular beam epitaxy (MBE) of Mn on GaAs (001) clean substrate is studied by thereflection high energy electron diffraction (RHEED).A new phase of Mn is obtained for thefirst time in experiment, which is usually named as Υ-Mn with the face-centered cubic structure.A lattice expansion of 5% parallel to the epi-layer is also observed near the GaAs substrate.And this expansion gradually decreases as the distance to the substrate increases.
基金
国家自然科学基金
关键词
锰
制备
分子束外延
结构
Electron diffraction
Epitaxial growth
Manganese
Molecular beam epitaxy
