摘要
本文对GaAs/GaAlAs系掩埋结构的外延生长工艺进行了十分细致的研究,并就生长特性和生长形貌等作了较全面的分析。将此外延生长技术运用于体材料结构或量子阱结构的一次外延片,均获得了具有极低阈值,性能优越的半导体激光器件。
The liquid phase epitaxy (LPE) regrowth process for buried-heterostructure lasers isstudied in detail. The growth morphology and characteristics are comprehensively analyzed.Making use of this epitaxial technique, we fabricated the buried-heterostructure lasers withextremely low current threshold and superior characteristics for wafers with active layer ofbulk material or strained quantum well material.
