多峰I—V特性的共振隧穿量子器件

Resonant Tunneling Quantum Devices with Multiple-Peak I-V Characteristics

讨论了电子对双势垒共振隧穿的现象和特性,较为详细地论述了近年来发展起来的具有多峰I—V特性的共振隧穿量子器件的原理、结构和电路应用,最后展望了这类器件的发展前景。

Phenomena and properties of resonant tunneling of electrons through a double barriers are discussed. Principles ,structures and circuit applications of resonant tunneling quantum devices,which are developed rapidly in recent years,with multiple-peak I-V characteristics are reviewed in detail. Finally, future trend of this device is forecasted.