硅/硅直接键合的界面杂质

Impurities at the Silicon/Silicon Direct Bonding Interface

用SIMS和扩展电阻测试研究了常规p^+/n和n^+/n硅/硅键合界面的杂质O,H,C,N,Fe,Ni以及掺杂原子B,P的行为。经1 100℃ 1小时键合后,界面的H消失;O,C,N稳定;重金属杂质Fe,Ni仍在界面附近;掺杂原子B,P的扩散小于2μm。

SIMS and spreading resistance testing are used to study the charac-terization of H, O, C, N, Fe, Ni impurities ,boron and phosphorus dopants at the interface of bonded p+/n and n+/n structures. After one hour bonding at 1 100 , H at the interface disappears; O, C and N at the interface do not chahge; Fe and Ni remain near the interface. The diffusion of the boron and phosphorus dopants from the interface is less than 2 /m.