pn结泄漏电流对高温集成MOSFET交流性能的影响

Influence of the Leakage Current in a pn Junction on High Temperature Integrated MOSFET's Alternating Characteristics

分析了漏源pn结泄漏电流对高温MOS模拟集成电路中、工作在零温度系数(ZTC点)的MOSFET交流参数的影响。研究结果表明,pn结扩散电流对高温MOSFET的交流性能有极大的影响,而产生电流的影响则可以忽略不计。减小泄漏电流对高温MOSFET交流性能影响的重要方法是增加衬底掺杂浓度。还给出了漏源pn结泄漏电流和工作在ZTC点的漏源电流最大允许比例的计算公式。

This paper analyzes how the leakage current in a pn junction affects the alternating current characteristics of the MOSFETs working at zero tempera-ture coefficient biased point. The results have shown that the pn junction diffusion currents may have great influence on high temperature silicon MOSFETs hut the generation currents have almost no influence. To reduce the effects of leakage currents , it is necessary to increase substrate doping concentration. The paper also gives a calculating formula for the maximal allowable ratio between the leakage current and the drain current at ZTC point.