关于SOI/SDB薄膜全耗尽隐埋N沟MOSFET的新型解析模型

A Novel Analytical Model for Thin Film Fully Depleted Buried N-Channel SOI/SDB MOSFET (SOI/SDB FD BC NMOSFET)

对SOI/SDB薄膜全耗尽隐埋N沟MOSFET(FDBC NMOSFET)的器件结构及导电机理进行了深入研究,建立了明确的物理解析模型,推导出各种状态下器件工作电流的解析表达式。并将解析模型的计算结果与实验数据进行了比较和讨论。

In this paper, conduction mechanism in thin-film fully depleted buried N-channel SOI/SDB MOSFET is studied in detail, the definite physical model is developed and analytical expressions under various conditions have been provided. Finally, the analytical results based on this model are compared with the experimental results,and some discussions are made.