MeV Si^+注入SI-GaAs的激活能研究

The Activation Energy of MeV Si^+ Implants in SI-GaAs

报导不同注量下MeV硅离子注入半绝缘砷化镓衬底的激活能,随注量增加激活能增大。对相同注入条件分别经一步或两步快退火处理样品的电特性进行了比较,认为MeV硅离子注入砷化镓衬底的退火行为可以分为损伤恢复和杂质激活两步,其杂质激活与点缺陷的运动有关。从能量角度分析了两步快退火优于一步快退火的原因。

The activation energy of MeV Si+ implants in SI-GaAs has been in-vestigated. The energy required for activation increases with the increasing implan-tation guantities. The comparison of the electrical properties was conducted among the specimens implanted under the same conditions,but annealed by different ways. A two-step annealing reveals that there are two separable processes involved in an-nealing MeV Si+ implanted GaAs,namely the crystal recovery and the dopant activation. The dopant point defect interactions control the activation of MeV Si+ im-plantation. The superiority of a two-step annealing is discussed from the energy point of view.