多孔硅的电致发光

Current-Induced Light Emission from a Porous Silicon Device

采用横向阳极氧化技术在n型单晶硅衬底上制备多孔硅,室温下光荧光谱峰值位于688nm;表面蒸铝形成铝/多孔硅/硅的类肖特基结构,并观察到采用这种方法生长的多孔硅样品的室温电致发光。铝/多孔硅结具有良好的整流特性,在-10V内反向漏电流小于50nA,理想因子为7。室温电致发光的阈值电流为8.5mA,发光强度随正向电流的增加而加强。

The luminescent porous silicon(PS) with a peak at 688 nm was fab-ricated on an n-type silicon substrate by lateral anodization. Al/PS Schottky-like junction exhibits good rectifying characteristics with an ideality factor of 7. The cur-rent-induced light emission (CILE) from such a device can be abserved when the forward electrical current is more than 8-5 mA. The reverse bias leakage current within -10 V is less than 50 nA. The intensity of CILE increases with increasing forward current.