3mm波段硅双漂移崩越二极管外延材料研制

An Investigation of the Epitaxial Material for 3 mm Waveband Si DDR IMPATT Diodes

报导了3 mm波段硅双漂移崩越二极管所需PN/N^+多层、亚微米外延材料的常规CVD生长技术,研究了实现这些高要求的多层结构的方法,得到了最佳的外延工艺条件。

In this paper,a vapor phase growth technique of PN/N+ multilayer submicron epitaxial material for 3 mm waveband Si DDR IMPATT diodes is pre-sented. The approaches to obtain these high quality multilayer structures are studied. The optimum epitaxial process conditions have been established.